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| MITSUBISHI IGBT MODULES CM400DY-24A HIGH POWER SWITCHING USE CM400DY-24A IC ................................................................... 400A VCES ......................................................... 1200V Insulated Type 2-elements in a pack APPLICATION AC drive inverters & Servo controls, etc OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm 14 110 930.25 14 14 4 E2 G2 80 620.25 6 G1 E1 C2E1 E2 C1 3-M6 NUTS 25 25 21.5 4-6.5 MOUNTING HOLES 6 30 (20.5) 15 18 7 18 7 18 TAB #110. t=0.5 8.5 +1.0 -0.5 C2E1 E2 C1 G1 E1 29 LABEL 21.2 CIRCUIT DIAGRAM E2 G2 Mar. 2004 MITSUBISHI IGBT MODULES CM400DY-24A HIGH POWER SWITCHING USE ABSOLUTE MAXIMUM RATINGS Symbol VCES VGES IC ICM IE (Note 1) IEM (Note 1) PC (Note 3) Tj Tstg Viso -- -- -- Parameter Collector-emitter voltage Gate-emitter voltage Collector current Emitter current (Tj = 25C) Conditions G-E Short C-E Short DC, TC = 85C*1 Pulse Pulse TC = 25C*1 (Note 2) (Note 2) Maximum collector dissipation Junction temperature Storage temperature Isolation voltage Torque strength Weight Main terminal to base plate, AC 1 min. Main terminal M6 Mounting holes M6 Typical value Ratings 1200 20 400 800 400 800 2710 -40 ~ +150 -40 ~ +125 2500 3.5 ~ 4.5 3.5 ~ 4.5 580 Unit V V A A W C C V N*m g ELECTRICAL CHARACTERISTICS Symbol ICES VGE(th) IGES VCE(sat) Cies Coes Cres QG td(on) tr td(off) tf trr (Note 1) Qrr (Note 1) VEC(Note 1) Rth(j-c)Q Rth(j-c)R Rth(c-f) RG Parameter (Tj = 25C) Test conditions VCE = VCES, VGE = 0V IC = 40mA, VCE = 10V VGE = VGES, VCE = 0V Tj = 25C IC = 400A, VGE = 15V Tj = 125C VCE = 10V VGE = 0V VCC = 600V, IC = 400A, VGE = 15V VCC = 600V, IC = 400A VGE1 = VGE2 = 15V RG = 0.78, Inductive load switching operation IE = 400A IE = 400A, VGE = 0V IGBT part (1/2 module)*1 FWDi part (1/2 module)*1 Case to fin, Thermal compound Applied (1/2 module)*2 Collector cutoff current Gate-emitter threshold voltage Gate leakage current Collector-emitter saturation voltage Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Turn-on delay time Turn-on rise time Turn-off delay time Turn-off fall time Reverse recovery time Reverse recovery charge Emitter-collector voltage Thermal resistance Contact thermal resistance External gate resistance Min. -- 6 -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- 0.78 Limits Typ. -- 7 -- 2.1 2.4 -- -- -- 2000 -- -- -- -- -- 16 -- -- -- 0.02 -- Max. 1 8 0.5 3.0 -- 70 6 1.4 -- 550 180 600 350 250 -- 3.8 0.046 0.085 -- 10 Unit mA V A V nF nC ns ns C V C/W *1 : Tc, Tf measured point is just under the chips. *2 : Typical value is measured by using Shin-etsu Silicone "G-746". Note 1. IE, VEC, trr & Qrr represent characteristics of the anti-parallel, emitter to collector free-wheel diode (FWDi). 2. Pulse width and repetition rate should be such that the device junction temp. (Tj) does not exceed Tjmax rating. 3. Junction temperature (Tj) should not increase beyond 150C. Mar. 2004 MITSUBISHI IGBT MODULES CM400DY-24A HIGH POWER SWITCHING USE PERFORMANCE CURVES OUTPUT CHARACTERISTICS (TYPICAL) COLLECTOR CURRENT IC (A) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) COLLECTOR EMITTER SATURATION VOLTAGE VCE (sat) (V) 800 700 600 500 400 VGE = 20V 4 15 13 Tj = 25C 12 VGE = 15V 3 2 11 300 200 100 0 0 2 4 6 8 10 9 10 1 Tj = 25C Tj = 125C 0 0 100 200 300 400 500 600 700 800 COLLECTOR CURRENT IC (A) COLLECTOR-EMITTER VOLTAGE VCE (V) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) COLLECTOR-EMITTER SATURATION VOLTAGE VCE (sat) (V) FREE-WHEEL DIODE FORWARD CHARACTERISTICS (TYPICAL) 103 7 10 Tj = 25C EMITTER CURRENT IE (A) 8 5 3 2 6 IC = 800A IC = 400A 2 IC = 160A 0 6 8 10 12 14 16 18 20 102 7 5 3 2 4 Tj = 25C Tj = 125C 0 1 2 3 4 5 101 GATE-EMITTER VOLTAGE VGE (V) EMITTER-COLLECTOR VOLTAGE VEC (V) CAPACITANCE-VCE CHARACTERISTICS (TYPICAL) 102 CAPACITANCE Cies, Coes, Cres (nF) 7 5 3 2 HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL) 103 Cies SWITCHING TIME (ns) 7 5 3 2 td(off) tf td(on) 101 7 5 3 2 Coes 102 7 5 3 2 100 7 5 3 2 tr Cres VGE = 0V 10-1 -1 10 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 COLLECTOR-EMITTER VOLTAGE VCE (V) 101 1 10 Conditions: VCC = 600V VGE = 15V RG = 0.78 Tj = 125C Inductive load 5 7 102 2 3 5 7 103 2 3 COLLECTOR CURRENT IC (A) Mar. 2004 MITSUBISHI IGBT MODULES CM400DY-24A HIGH POWER SWITCHING USE REVERSE RECOVERY TIME trr (ns) REVERSE RECOVERY CURRENT lrr (A) 7 5 3 2 NORMALIZED TRANSIENT THERMAL IMPEDANCE Zth (j-c') (ratio) REVERSE RECOVERY CHARACTERISTICS OF FREE-WHEEL DIODE (TYPICAL) 103 TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (IGBT part & FWDi part) 10-3 2 3 5 710-2 2 3 5 710-1 2 3 5 7 100 2 3 5 7 101 100 Single Pulse 7 5 TC' = 25C 3 Under the chip 2 Irr trr Conditions: VCC = 600V VGE = 15V RG = 0.78 Tj = 25C Inductive load 23 5 7 103 10-1 7 5 3 2 10-1 7 5 3 2 102 7 5 3 2 101 1 10 2 3 5 7 102 IGBT part: 10-2 Per unit base = 7 5 Rth(j-c) = 0.046C/W FWDi part: 3 Per unit base = 2 Rth(j-c) = 0.085C/W -3 10 10-2 7 5 3 2 10-3 10-5 2 3 5 710-4 2 3 5 7 10-3 EMITTER CURRENT IE (A) TIME (s) SWITCHING LOSS vs. COLLECTOR CURRENT (TYPICAL) 102 7 SWITCHING LOSS vs. GATE RESISTANCE (TYPICAL) Conditions: VCC = 600V VGE = 15V 3 IC = 400A Tj = 125C 2 Inductive load C snubber at bus 2 10 7 5 7 5 103 SWITCHING LOSS (mJ/pulse) 5 3 2 101 7 5 3 2 Esw(off) Esw(on) 100 1 10 Conditions: VCC = 600V VGE = 15V RG = 0.78 Tj = 125C Inductive load C snubber at bus 5 7 102 2 3 5 7 103 SWITCHING LOSS (mJ/pulse) Esw(on) Esw(off) 3 2 2 3 101 -1 10 2 3 5 7 100 2 3 5 7 101 COLLECTOR CURRENT IC (A) GATE RESISTANCE RG () RECOVERY LOSS vs. IE (TYPICAL) 102 7 RECOVERY LOSS vs. GATE RESISTANCE (TYPICAL) 102 7 RECOVERY LOSS (mJ/pulse) RECOVERY LOSS (mJ/pulse) 5 3 2 5 3 2 Err Err 101 7 5 3 2 100 1 10 2 3 Conditions: VCC = 600V VGE = 15V RG = 0.78 Tj = 125C Inductive load C snubber at bus 5 7 102 23 5 7 103 101 7 5 3 2 Conditions: VCC = 600V VGE = 15V IE = 400A Tj = 125C Inductive load C snubber at bus 2 3 5 7 100 2 3 5 7 101 100 -1 10 EMITTER CURRENT IE (A) GATE RESISTANCE RG () Mar. 2004 MITSUBISHI IGBT MODULES CM400DY-24A HIGH POWER SWITCHING USE GATE CHARGE CHARACTERISTICS (TYPICAL) 20 GATE-EMITTER VOLTAGE VGE (V) IC = 400A 16 VCC = 400V VCC = 600V 12 8 4 0 0 500 1000 1500 2000 2500 3000 GATE CHARGE QG (nC) Mar. 2004 |
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